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MG200Q2YS60A
MITSUBISHI IGBT Module
MG200Q2YS60A(1200V/200A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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MG200Q2YS60A
Package Dimensions
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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MG200Q2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 1200 20 200 400 200 A 400 2000 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V A
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 200 A VCC = 600 V, IC = 200 A VGE = 15 V, RG = 10 (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 200 mA VGE = 15 V, IC = 200 A Tj = 25C Tj = 125C Min 6.0 0.10 Typ. 7.0 2.4 15000 2.4 Max +3/-4 100 1.0 8.0 2.8 3.2 1.00 2.00 0.50 0.50 2.8 V s pF Unit mA nA mA V V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 600 V, VGE = 15 V Min 240 100 Typ. Max 125 8 Unit A C s
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MG200Q2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.062 0.136 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG200Q2YS60A
Remark

Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = * 14.8 V < VGE < 17.0 V = = * RG > 10 = * Tj < 125C =

To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.

Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 14.8 10 Typ. 600 15 Max 750 17 20 Unit V V kHz
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MG200Q2YS60A
IC - VCE
400 Common emitter Tj = 25C VGE = 20 V 12 V 400 Common emitter Tj = 125C
IC - VCE
VGE = 20 V 12 V 15 V 10 V
IC (A)
300
IC (A)
10 V
15 V
300
Collector current
200
Collector current
200 9V 100 8V
100 9V
8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6 IC = 400 A 200 A 2 100 A 0 0
4 200 A 2 100 A 0 0
IC = 400 A
4
5
10
15
20
5
10
15
20
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
VCE - VGE
12 Common emitter 400 Tj = -40C 10 Common emitter VCE = 5 V
IC - VGE
(V)
IC (A) Collector current
200 A
VCE
300
8
Collector-emitter voltage
6
200
4
IC = 400 A
Tj = 125C 100 25C -40C
2 100 A 0 0 5 10 15 20 0 0 2 4 6
8
10
12
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
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MG200Q2YS60A
IF - VF
400 1000 Common emitter Common cathode VGE = 0 V RL = 3 Tj = 25C
VCE, VGE - QG
20
(V)
300
Forward current IF
Collector-emitter voltage
VCE
800
16
200 125C 100
Tj = 25C
600 V 400 200 V VCE = 0 V 200 4 8
0 0
-40C 1 2 3 4 5
0 0
500
1000
1500
0 2000
Forward voltage
VF (V)
Charge
QG
(nC)
SW time - RG
10000 VCC = 600 V IC = 200 A VGE = 15 V toff Eoff 100
Eon, Eoff - RG
(ns)
1000
Eon , Eoff
(mJ)
td (off) tf 100 tr
ton
Eon 10
SW time
td (on)
SW loss
Common emitter VCC = 600 V IC = 200 A VGE = 15 V Tj = 25C Tj = 125C 10 15 20 25
10 0
5
10
15
20
25
1 0
5
Gate resistance
RG
()
Gate resistance
RG
()
SW time - IC
10000 100
Eon, Eoff - IC
toff
(mJ)
(ns)
1000 td (off) ton tf
Eoff
SW time
Eon, Eoff
10
Eon
100
td (on) Common emitter VCC = 600 V RG = 10 VGE = 15 V 50 100 150
SW loss
Common emitter VCC = 600 V RG = 10 VGE = 15 V 1 0 50 100 150 Tj = 25C Tj = 125C 200
tr
10 0
Tj = 25C Tj = 125C 200
Collector current IC (A)
Collector current IC (A)
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Gate-emitter voltage
600
400 V
12
VGE (V)
(A)
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MG200Q2YS60A
Irr, trr - IF
1000 100
Edsw - IF
Edsw (mJ)
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
trr
10
100 Irr
Reverse recovery loss
1 Common cathode VCC = 600 V RG = 10 VGE = 15 V 50 100 150 Tj = 25C Tj = 125C 200
Common emitter VCC = 600 V RG = 10 VGE = 15 V 10 0 50 100 150 Tj = 25C Tj = 125C 200
0.1 0
Forward current
IF (A)
Forward current
IF (A)
C - VCE
100000 1000
Safe-operating area
IC max (pulsed)*
IC (A)
(pF)
Cies 10000
IC max (continuous) 100 1 ms 100 s
Coes 1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres
Collector current
50 s
Capacitance
C
10
*: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 10
1 1
100
1000
10000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
1000
Rth - tw
1
IC (A)
TC = 25C 100 Diode stage
Collector current
Rth (j-c) (C/W)
0.1 Transistor stage 0.01
10 Tj < 125C = RG = 10 VGE = 15 V 1 0 400 800 1200
0.001 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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